? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c60v v dgr t j = 25 c to 175 c; r gs = 1 m ? 60 v v gs transient 30 v v gsm continuous 20 v i d25 t c = 25 c 200 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 400 a i ar t c = 25 c60a e ar t c = 25 c80mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 714 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p) 1.13/10 nm/lb.in. weight to-3p 5.5 g g = gate d = drain s = source tab = drain ds99273e(12/05) polarht tm power mosfet v dss =60v i d25 = 200 a r ds(on) 6.0 m ? ? ? ? ? n-channel enhancement mode avalanche rated features l international standard package l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density to-3p (ixtq) g d s (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a60v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 60a 6.0 m ? v gs = 15 v, i d = 400a 5.0 m ? pulse test, t 300 s, duty cycle d 2 % ixtq 200n06p
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 200n06p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60a, pulse test 45 65 s c iss 5400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 3550 pf c rss 1360 pf t d(on) 35 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 60 ns t d(off) r g = 3.3 ? (external) 90 ns t f 40 ns q g(on) 200 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 37 nc q gd 110 nc r thjc 0.21 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 200 a i sm repetitive 400 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a, -di/dt = 100 a/ s90ns q rm v r = 30 v, v gs = 0 v 1.0 c to-3p (ixtq) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixtq 200n06p fig. 2. extended output characteristics @ 25 o c 0 50 100 150 200 250 300 350 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v 5v fig. 3. output characteristics @ 150 o c 0 25 50 75 100 125 150 175 200 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v d s - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 200a i d = 100a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external-lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 50 100 150 200 250 300 350 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 200n06p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 q g - nanocoulombs v g s - volts v ds = 50v i d = 100a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 150 175 200 225 250 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 110100 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms
? 2006 ixys all rights reserved ixtq 200n06p fig. 13. m axim um trans ie nt the rm al re s is tance 0.00 0.01 0.10 1.00 0.1 1 10 100 1000 pu ls e w id th - m illis e c onds r ( t h ) j c - oc / w
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